Samsung is planning to unveil a range of innovative memory products at the upcoming International Solid-State Circuit Conference IEEE 2024. In addition to the previously announced GDDR7 memory, which will be showcased in a session dedicated to high-density memory, the South Korean tech giant will also present an exceptionally fast DDR5 memory chip.
Achieving High Capacity
Utilizing 12-nanometer (nm) process technology, Samsung has developed a 32 GB DDR5 DRAM chip, providing twice the capacity of a 16 GB DDR5 DRAM chip while maintaining the same package size.
Reduced Power Consumption
While Samsung has not provided many details about the DDR5 chip to be presented at the conference, we know that the DDR5 chip’s I/O speed is up to 8000 Mbps per pin, and it has been created using the innovative Symmetric-Mosaic Architecture, which utilizes Samsung’s 10nm-class 5th generation production nodes specifically designed for DRAM products.
When the introduction of the new DDR5 product was announced in late 2023, SangJoon Hwang, Vice President of Product and Technology for DRAM at Samsung Electronics, stated, “With our 32 GB 12nm-class DRAM, we have a solution that enables DRAM modules with capacities up to 1 terabyte (TB), allowing us to perfectly meet the growing demand for high-capacity DRAM in the era of artificial intelligence (AI) and big data. We will continue to develop DRAM solutions using differentiated process and design technologies to push the boundaries of memory technology.”
Previous 128 GB DDR5 DRAM modules, utilizing 16 GB DRAM chips, required the Through Silicon Via (TSV) process, but the new 32 GB DDR5 DRAM chips enable the creation of a 128 GB module without the need for TSV, resulting in approximately a 10% reduction in power consumption, according to Samsung. This is an optimal solution for data centers that are currently facing increasing energy demands in AI systems.
Samsung’s latest DDR5 technology allows for the creation of 32 GB and 48 GB DIMM modules operating at DDR5-8000 speeds in single-rank configurations, and also supports 64 GB and 96 GB DIMM modules in dual-rank configurations. Undoubtedly, we will learn more about the new memory during the conference.
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FAQ:
1. Which innovative memory products will Samsung showcase at the International Solid-State Circuit Conference IEEE 2024?
Samsung plans to present GDDR7 memory and DDR5 memory chip.
2. What is the capacity of Samsung’s DDR5 DRAM chip?
Samsung has developed a 32 GB DDR5 DRAM chip.
3. What are the benefits of using Samsung’s DDR5 memory chip?
The benefit of using Samsung’s DDR5 memory chip is its reduced power consumption.
4. What are the technical details of Samsung’s DDR5 memory chip?
The DDR5 chip has an I/O speed of up to 8000 Mbps per pin and is created using the innovative Symmetric-Mosaic Architecture.
5. What are the prospects for the development of Samsung’s DRAM products?
Samsung plans to develop DRAM solutions using differentiated process and design technologies to push the boundaries of memory technology.
Key Terms:
– DRAM: dynamic random-access memory – a type of computer memory used for storing temporary data needed for immediate access by the processor.
– GDDR7: Graphics Double Data Rate 7 – the latest generation of memory for graphics applications.
– DDR5: Double Data Rate 5 – the fifth generation of operating memory, primarily used in computers and smartphones.
– I/O: input/output – communication interfaces used for data transfer between devices.
– TSV: Through Silicon Via – a technology that enables the connection of layers in electronic circuits through vias drilled through their entire thickness.
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The source of the article is from the blog lanoticiadigital.com.ar